Beam alignment for scanning beam interference lithography

By interfering two small diameter Gaussian laser beams, scanning beam interference lithography ~SBIL! is capable of patterning linear gratings and grids in resist while controlling their spatial phase distortions to the nanometer level. Our tool has a patterning area that is up to 300 mm in diameter. The motive for developing SBIL is to provide the semiconductor industry with a set of absolute metrology standards, but the technology is easily adaptable to other important applications such as the making of high precision optical encoders. In this article, we describe a system for carrying out automated beam alignment for SBIL. Our design goals require tight alignment tolerances, where beam position and angle alignment errors must be controlled to ;10 mm and ;10 mrad, respectively. We describe our system setup, and discuss the so-called iterative beam alignment principle, focusing specifically on deriving a mathematical formalism that can guide the development of similar systems in the future. Repeatability experiments demonstrate that our system fulfills the alignment requirements for nanometer-level SBIL writing. © 2002 American Vacuum Society. @DOI: 10.1116/1.1523402#