Nanoscale manipulation of the Mott insulating state coupled to charge order in 1T-TaS2

نویسندگان

  • Doohee Cho
  • Sangmo Cheon
  • Ki-Seok Kim
  • Sung-Hoon Lee
  • Yong-Heum Cho
  • Sang-Wook Cheong
  • Han Woong Yeom
چکیده

The controllability over strongly correlated electronic states promises unique electronic devices. A recent example is an optically induced ultrafast switching device based on the transition between the correlated Mott insulating state and a metallic state of a transition metal dichalcogenide 1T-TaS2. However, the electronic switching has been challenging and the nature of the transition has been veiled. Here we demonstrate the nanoscale electronic manipulation of the Mott state of 1T-TaS2. The voltage pulse from a scanning tunnelling microscope switches the insulating phase locally into a metallic phase with irregularly textured domain walls in the charge density wave order inherent to this Mott state. The metallic state is revealed as a correlated phase, which is induced by the moderate reduction of electron correlation due to the charge density wave decoherence.

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عنوان ژورنال:

دوره 7  شماره 

صفحات  -

تاریخ انتشار 2016