Polarization fatigue and photoinduced current in (Pb0.72La0.28)Ti0.93O3 buffered Pb(Zr0.52Ti0.48)O3 films on platinized silicon
نویسندگان
چکیده
We report a study on the fatigue behavior of Pb(Zr0.52Ti0.48)TiO3 (PZT) films deposited on Pt/Ti/SiO2/Si substrates by a sol–gel method with singleand double-sided (Pb0.72La0.28)Ti0.93O3 (PLT) buffer layers, with an attempt to clarify the role of the top and bottom PLT buffer layers on the fatigue endurance (FE) of the PZT films. It is revealed that the existence of the PLT buffer layer and the level of driving alternatingcurrent electric switching field strongly influence the fatigue properties. In terms of the existence of an asymmetric built-in electric field near the top and bottom interfaces between the film and metal electrode, we explain the observed fatigue properties. 2008 Elsevier Ltd. All rights reserved.
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تاریخ انتشار 2009