Unification of the hole transport in polymeric field-effect transistors and light-emitting diodes.

نویسندگان

  • C Tanase
  • E J Meijer
  • P W M Blom
  • D M De Leeuw
چکیده

A systematic study of the hole mobility in hole-only diodes and field-effect transistors based on poly(2-methoxy-5-(3('),7(')-dimethyloctyloxy)-p-phenylene vinylene) and on amorphous poly(3-hexyl thiophene) has been performed as a function of temperature and applied bias. The experimental hole mobilities extracted from both types of devices, although based on a single polymeric semiconductor, can differ by 3 orders of magnitude. We demonstrate that this apparent discrepancy originates from the strong dependence of the hole mobility on the charge carrier density in disordered semiconducting polymers.

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عنوان ژورنال:
  • Physical review letters

دوره 91 21  شماره 

صفحات  -

تاریخ انتشار 2003