Ramp-Rate Effects on Transient Enhanced Diffusion and Dopant Activation
نویسندگان
چکیده
Use of high ramp rates ~.400°C/s! in rapid thermal annealing after ion implantation leads to experimentally observed improvements in junction depth and the reverse narrow-channel effect. However, a straightforward explanation for this effect has been lacking. Via modeling, we find that increasing the heating rate permits clusters with dissociation energies lower than the maximum of 3.5-3.7 eV to survive to higher temperatures. This improved survival delays the increase in Si interstitial concentrations near the top of an annealing spike, which decreases the profile spreading. © 2003 The Electrochemical Society. @DOI: 10.1149/1.1627354# All rights reserved.
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