Fast Switching in Magnetic Tunnel Junctions with Double Barrier Layer
نویسندگان
چکیده
منابع مشابه
MgO-based double barrier magnetic tunnel junctions with thin free layers
The free layer thickness tfree in double barrier magnetic tunnel junctions DMTJs based on crystalline MgO barriers and CoFeB ferromagnetic layers has been varied from 0.5 to 3.0 nm in order to investigate its effect on the magnetic and electrical properties. One obvious feature of DMTJs with tfree 1 nm is the absence of sharp free layer switching in the TMR curves, which can be explained by the...
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