Morphology and Resistivity of Cvd Polycrystalline Silicon Layers Containing Carbon

The influence of the addition of carbon on the crystalline structure and resistivity of polycrystalline silicon layers grown by simultaneous decomposition of SiH,, C^H. a n d P H T a t '°"° c w a s studied. Carbon content, morphology, preferred orientation, crystallite size, lattice strains and resistivity were determined. It was found that carbon has a pronounced effect on the crystalline structure and resistivity of the layers. A correlation exists between the structure and resistivity which can be understood qualitatively.