Relating Data Characteristics to Transition Activity in High-Level Static CMOS Design
نویسندگان
چکیده
Signiicant power reduction can be obtained in the datapath of a CMOS VLSI circuit if data characteristics are carefully exploited. An improved approach that achieves such reduction by using a new model relating important data characteristics to the transition activity in static CMOS circuits is presented. Speciically, relationships between xed-point, two's complement data and 0 ! 1 transition activity in static CMOS circuits are identiied. Models for computing transition activity in terms of a set of statistical parameters are developed, and their performance compared with the Dual Bit Type model. Then, the use of the relationships and models to analyze and signiicantly reduce 0 ! 1 transition activity with little computational eeort is illustrated by several, high-level synthesis examples.
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