Room-temperature far-infrared emission from a self-organized InGaAsÕGaAs quantum-dot laser
نویسندگان
چکیده
Far-infrared spontaneous emission at 300 K and lower temperatures, due to intersubband transitions in self-organized In0.4Ga0.6As/GaAs quantum dots, has been characterized. Measurements were made with a multidot layer near-infrared ~;1 mm! interband laser. The far-infrared signal, centered at 12 mm, was enhanced after the interband transition reached threshold at 300 K. The results are explained in terms of the carrier dynamics in the dots. © 2000 American Institute of Physics. @S0003-6951~00!04923-8#
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