Toward complementary ionic circuits: the npn ion bipolar junction transistor.

Polyphosphonium-based ion bipolar junction transistors.

Advancements in the field of electronics during the past few decades have inspired the use of transistors in a diversity of research fields, including biology and medicine. However, signals in living organisms are not only carried by electrons but also through fluxes of ions and biomolecules. Thus, in order to implement the transistor functionality to control biological signals, devices that ca...

Logic gates based on ion transistors.

Precise control over processing, transport and delivery of ionic and molecular signals is of great importance in numerous fields of life sciences. Integrated circuits based on ion transistors would be one approach to route and dispense complex chemical signal patterns to achieve such control. To date several types of ion transistors have been reported; however, only individual devices have so f...

Modeling of charge transport in ion bipolar junction transistors.

Spatiotemporal control of the complex chemical microenvironment is of great importance to many fields within life science. One way to facilitate such control is to construct delivery circuits, comprising arrays of dispensing outlets, for ions and charged biomolecules based on ionic transistors. This allows for addressability of ionic signals, which opens up for spatiotemporally controlled deliv...

Validation of an Extended Hydrodynamic Model for a Submicron npn Bipolar Junction Transistor

Proposal and design of a new SiC-emitter lateral NPM Schottky collector bipolar transistor on SOI for VLS - Circuits, Devices and Systems, IEE Proceedings [see also IEE Proceedings G- Circuits, Devices and

A novel bipolar transistor structure, namely, a SiC emitter lateral NPM Schottky collector bipolar transistor (SCBT) with a silicon-on-insulator (SOI) substrate is explored using two-dimensional (2-D) simulation. A comprehensive comparison of the proposed structure with its equivalent Si lateral NPN BJT and an SiC emitter lateral NPN HBT is presented. Based on simulation results, the authors de...