Efficient High-Frequency Spin-Torque Oscillators Composed of Two Three-Layer MgO-MTJs with a Common Free Layer
نویسندگان
چکیده
We present a novel spin-torque oscillator based on two three-layer MgO-MTJs with a shared free layer. By performing extensive micromagnetic simulations we found that the structure exhibits a wide tunability of oscillation frequencies from a few GHz to several tens of GHz. We discuss the optimization of such structures in order to obtain the maximum output power. Keywords—spin-torque; oscillator; micromagnetic simulation; MgO-MTJ
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Geometry Optimization of Spin-Torque Oscillators Composed of Two MgO-MTJs with a Shared Free Layer
New types of spintronics devices utilizing all-electrical magnetization manipulation by current, such as spin-torque transfer RAM and spin-torque oscillators, have been developed based on MgO magnetic tunnel junctions (MTJs) with a large magneto-resistance ratio [1]. Spin-torque oscillators based on a single MTJ with in-plane magnetization [2] show high frequency capabilities, but still need an...
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