Effect of substrate proximity on luminescence yield from Si nanocrystals
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Depth distribution of luminescent Si nanocrystals in Si implanted SiO2 films on Si
Depth-resolved measurements of the photoluminescence of Si implanted and annealed SiO2 films on Si have been performed to determine the depth distribution of luminescent Si nanocrystals. Si nanocrystals with diameters ranging from ;2 to 5 nm were formed by implantation of 35 keV Si ions into a 110-nm-thick thermally grown SiO2 film on Si~100! at a fluence of 6310 16 Si/cm, followed by a thermal...
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