Unusual increase of the Auger recombination current in 1.3 μm GaInNAs quantum-well lasers under high pressure
نویسندگان
چکیده
Related Articles Single-mode quantum cascade lasers employing asymmetric Mach-Zehnder interferometer type cavities Appl. Phys. Lett. 101, 161115 (2012) Bistability patterns and nonlinear switching with very high contrast ratio in a 1550nm quantum dash semiconductor laser Appl. Phys. Lett. 101, 161117 (2012) Relative intensity noise of a quantum well transistor laser Appl. Phys. Lett. 101, 151118 (2012) Blue monolithic AlInN-based vertical cavity surface emitting laser diode on free-standing GaN substrate Appl. Phys. Lett. 101, 151113 (2012) Ground state terahertz quantum cascade lasers Appl. Phys. Lett. 101, 151108 (2012)
منابع مشابه
Unusual increase of the Auger recombination current in 1.3 mm GaInNAs quantum-well lasers under high pressure
The pressure dependence of the total threshold current and its respective recombination components in 1.3 mm GaInNAs single-quantum-well lasers using spontaneous emission measurements up to 13 kbar is presented. We observed an unusual increase of the nonradiative Auger recombination current with increasing pressure in this material, which is opposite to those in 1.3 mm InP-based InGaAsP and AlG...
متن کاملHigh-Pressure Studies of Recombination Mechanisms in 1.3- m GaInNAs Quantum-Well Lasers
The pressure dependence of the components of the recombination current at threshold in 1.3m GaInNAs single quantum-well lasers is presented using for the first time high-pressure spontaneous emission measurements up to 13 kbar. It is shown that, above 6 kbar, the rapid increase of the threshold current with increasing pressure is associated with the unusual increase of the Auger-related nonradi...
متن کاملTheoretical study of Auger recombination in a GaInNAs 1.3 mm quantum well laser structure
We present a theoretical study of Auger recombination processes in a GaInNAs/GaAs quantum well structure designed for 1.3 mm laser emission. The calculations are based on a 10310 k"p model, incorporating valence, conduction, and nitrogen-induced bands. The Auger transition matrix elements are calculated explicitly, without introducing any further approximations into the Hamiltonian used. We con...
متن کاملCarrier recombination in 1.3 m GaAsSb/GaAs quantum well lasers
In this letter the authors present a comprehensive study of the threshold current and its temperature dependence in GaAsSb-based quantum well edge-emitting lasers for emission at 1.3 m. It is found that at room temperature, the threshold current is dominated by nonradiative recombination accounting for more than 90% of the total threshold current density. From high hydrostatic pressure dependen...
متن کاملInvestigation of 1.3- m GaInNAs Vertical-Cavity Surface-Emitting Lasers (VCSELs) Using Temperature, High-Pressure, and Modeling Techniques
We have investigated the temperature and pressure dependence of the threshold current ( th) of 1.3 m emitting GaInNAs vertical-cavity surface-emitting lasers (VCSELs) and the equivalent edge-emitting laser (EEL) devices employing the same active region. Our measurements show that the VCSEL devices have the peak of the gain spectrum on the high-energy side of the cavity mode energy and hence ope...
متن کامل