Modeling the transitions from capacitive to inductive to wave-sustained rf discharges

Radio frequency (rf) plasma sources used in the processing of thin films can be divided into three distinct categories: capacitive (E), inductive (H), and wave (W) -sustained (e.g., helicon) discharges. As the excitation power or voltage is increased, transitions from capacitive to inductive to helicon discharges are often observed, in some cases exhibiting hysteresis. A model is developed to determine these transitions based on the electron energy balance in the discharge and the coupling between capacitive, inductive, and helicon electron energy deposition. R6sum6: Les sources plasma radiofrequence (rf) qu'on utilise dans les processus de films minces peuvent se classer en trois categories : decharges capacitives (E), inductives 0 et entretenues par une onde CN) comme les decharges helicon. Lorsqu'on augmente la puissance ou la tension d'excitation, on observe souvent des transitions de regimes de decharges : capacitives inductives helicon. Dans certains cas, ces transitions presentent un hysteresis. Nous developpons un modele pour dderminer ces transitions a partir d'un bilan d'energie electronique dans la decharge et du couplage entre d&& d'energie electronique capacitif, inductif et helicon.