High Performance Ultraviolet 4H-SiC Avalanche Photodiodes

نویسندگان

  • Xiangyi Guo
  • Paul S. Ho
  • Dean P. Neikirk
  • Archie L. Holmes
  • Peter Sandvik
چکیده

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

Full-band Monte Carlo simulation of high-energy carrier transport in single photon avalanche diodes: Computation of breakdown probability, time to avalanche breakdown, and jitter

Related Articles Ultra-low noise single-photon detector based on Si avalanche photodiode Rev. Sci. Instrum. 82, 093110 (2011) GaN/SiC avalanche photodiodes Appl. Phys. Lett. 99, 131110 (2011) Influence of the metallic contact in extreme-ultraviolet and soft x-ray diamond based Schottky photodiodes J. Appl. Phys. 110, 054513 (2011) Organic position sensitive photodetectors based on lateral donor...

متن کامل

Demonstration of 4H-SiC UV single photon counting avalanche photodiode - Electronics Letters

Introduction: Single photon counting detectors enable the receiver of an optoelectronic system to achieve the ultimate receiver sensitivity, the quantum limit. They are also essential in applications that rely on the quantum nature of the light, such as quantum cryptography and quantum computing. Photomultiplier tubes (PMTs) are commonly used for single photon counting because of its high gain ...

متن کامل

Anti-reflective nano- and micro-structures on 4H-SiC for photodiodes

In this study, nano-scale honeycomb-shaped structures with anti-reflection properties were successfully formed on SiC. The surface of 4H-SiC wafer after a conventional photolithography process was etched by inductively coupled plasma. We demonstrate that the reflection characteristic of the fabricated photodiodes has significantly reduced by 55% compared with the reference devices. As a result,...

متن کامل

High-responsivity SiC Ultraviolet Photodetectors with SiO2 and Al2O3 Films

Silicon carbide (SiC) has shown considerable potential for ultraviolet (UV) photode‐ tectors due to its properties such as wide band gap (3.26 eV for 4H-SiC), high break down electric field and high thermal stability. 4H-SiC-based UV photodetectors such as Schottky, metal-semiconductor-metal (MSM), metal-insulator-semiconductor (MIS) and avalanche have been presenting excellent performance for ...

متن کامل

Electrical and ultraviolet characterization of 4H-SiC Schottky photodiodes.

Fabrication and electrical and optical characterization of 4H-SiC Schottky UV photodetectors with nickel silicide interdigitated contacts is reported. Dark capacitance and current measurements as a function of applied voltage over the temperature range 20 °C - 120 °C are presented. The results show consistent performance among devices. Their leakage current density, at the highest investigated ...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

عنوان ژورنال:

دوره   شماره 

صفحات  -

تاریخ انتشار 2005