On the theory of electron transfer reactions at semiconductor electrodeÕliquid interfaces
نویسندگان
چکیده
Electron transfer reaction rate constants at semiconductor/liquid interfaces are calculated using the Fermi Golden Rule and a tight-binding model for the semiconductors. The slab method and a z-transform method are employed in obtaining the electronic structures of semiconductors with surfaces and are compared. The maximum electron transfer rate constants at Si/viologen and InP/Me2Fc 1/0 interfaces are computed using the tight-binding type calculations for the solid and the extended-Hückel for the coupling to the redox agent at the interface. These results for the bulk states are compared with the experimentally measured values of Lewis and co-workers, and are in reasonable agreement, without adjusting parameters. In the case of InP/liquid interface, the unusual current vs applied potential behavior is additionally interpreted, in part, by the presence of surface states. © 2000 American Institute of Physics. @S0021-9606~00!70507-1#
منابع مشابه
On the theory of electron transfer reactions at semiconductorÕliquid interfaces. II. A free electron model
Electron transfer reactions at semiconductor/liquid interfaces are studied using the Fermi Golden rule and a free electron model for the semiconductor and the redox molecule. Bardeen’s method is adapted to calculate the coupling matrix element between the molecular and semiconductor electronic states where the effective electron mass in the semiconductor need not equal the actual electron mass....
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