Glancing-angle diffraction anomalous fine structure of InAs quantum dots and quantum wires.

We have performed Diffraction Anomalous Fine Structure measurements at the As K-edge of self-growth InAs/InP(001) Quantum Wires and InAs/GaAs(001) Quantum Dots. The samples have been grown by Molecular Beam Epitaxy and their equivalent thickness is of 2.5 monolayers. We have measured the (440) and (420) Bragg reflections in glancing-angle scattering geometry, at incidence angles close to the substrate critical angle. We demonstrate the feasibility of the experiment reporting, for the first time. Diffraction Anomalous Fine Structure spectra of such low coverage epitaxial layers, and we show that the analysis of the Diffraction Anomalous Fine Structure lineshape together with the analysis of oscillatory part of the signal, can provide information about composition and strain of the nanostructures.