Epitaxial relationship in the AlNÕSi„001... heterosystem

نویسندگان

  • V. Lebedev
  • J. Jinschek
  • U. Kaiser
  • B. Schröter
  • W. Richter
چکیده

The epitaxial growth of crystalline wurtzite AlN thin films on ~001! Si substrates by plasma-assisted molecular-beam epitaxy is reported. The nucleation and the growth dynamics have been studied in situ by reflection high-energy electron diffraction. Cross-sectional transmission electron microscopy and x-ray diffraction investigations revealed a two-domain film structure (AlN and AlN! with a 30° rotation between neighboring domain orientations and an epitaxial orientation relationship of @0001#AlNi@001#Si and ^011̄0&AlNi^2̄110&AlNi@110#Si. A model for the nucleation and growth mechanism of 2H–AlN layers on Si~001! is proposed. © 2000 American Institute of Physics. @S0003-6951~00!03915-2#

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تاریخ انتشار 2000