Water-enhanced negative bias temperature instability in p-type low temperature polycrystalline silicon thin film transistors

نویسندگان

  • Meng Zhang
  • Wei Zhou
  • Rongsheng Chen
  • Man Wong
  • Hoi-Sing Kwok
چکیده

Water-enhanced degradation of p-type low temperature polycrystalline silicon thin film transistors under negative bias temperature (NBT) condition is studied. H2O penetration into gate oxide network and the role of H2O during NBT stress are confirmed and clarified respectively. To prevent H2O diffusion, a combination of a layer of PECVD SiO2 and a layer of PECVD Si3N4 as passivation layers are investigated, revealing that 100 nm SiO2 and 300 nm Si3N4 can effectively block H2O diffusion and improve device NBT reliability. 2013 Elsevier Ltd. All rights reserved.

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عنوان ژورنال:
  • Microelectronics Reliability

دوره 54  شماره 

صفحات  -

تاریخ انتشار 2014