Lattice location of implanted Cu in highly doped Si
نویسندگان
چکیده
We report on the lattice location of ion-implanted Cu in pand n-Si using the emission channeling technique. Following room-temperature implantation, the majority of Cu was found on near-substitutional sites in both pand n-Si. Annealing in the temperature range 200-600°C resulted in changes of near-substitutional Cu to random sites in p-Si, while in n-Si all of the near-substitutional Cu was converted to ideal substitutional lattice sites. The activation energy for dissociation is estimated to be 1.7-2.0 eV for near-substitutional Cu in p-Si and 2.9(2) eV for ideal substitutional Cu in n-Si.
منابع مشابه
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