Influence of cap layer on implantation induced interdiffusion in InP/InGaAs quantum wells
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منابع مشابه
InGaAs/InP quantum well intermixing studied by cross-sectional scanning tunneling microscopy
Cross-sectional scanning tunneling microscopy (STM) is used to study lattice matched InGaAs/InP quantum well (QW) intermixing induced by ion implantation and thermal annealing. Different strain development in QWs (determined by STM topography of elastic relaxation in cross-sectionally cleaved samples) is found to be dependent upon the range of the implanted ions relative to the QWs. It is found...
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Proton implantation-induced intermixing of InAs quantum dots QDs capped with InP, GaInAsP, and InP and InGaAs layers grown by metal-organic chemical vapor deposition is investigated. The samples are annealed at 750, 800, 850, and 900 °C for 30 s and thermal stability of the QDs is studied. The optimum annealing temperature is around 800 °C which gives maximum implantation-induced energy shift. ...
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