Characterization of Dielectric Layers for Passivation of 4H-SiC Devices
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منابع مشابه
Improved Stability of 4H Sic-MOS Devices after Phosphorous Passivation with Etching Process
Phosphorous passivation of the interface (4H-SiC/SiO2) improves interface trap density (Dit) from 10 13 eV -1 cm -2 to 2×10 12 eV -1 cm -2 at 0.2eV below the conduction band edge of 4H-SiC. Due to the formation of phosphosilicate glass (PSG) layer during P passivation, metal-oxide-semiconductor capacitors (MOS-Cs) are highly unstable. Under bias-temperature stress (BTS) there is very large shif...
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