Macro-modeling for Mos Device Simulation
نویسندگان
چکیده
By making use of the MOS diode theory, the carrier, and current distribution, as well as the mobility in a MOS device is evaluated. Simple analytical expressions are used for parameters like mobility, carrier concentration, and transversal electric field. Agreement between experimental and simulated results from an LDD MOSFET and an n-well resistance is in agreement, probing this approach is suitable as a plug-in model tester for quick model evaluation.
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