Enhanced carrier transport along edges of graphene devices.
نویسندگان
چکیده
The relation between macroscopic charge transport properties and microscopic carrier distribution is one of the central issues in the physics and future applications of graphene devices (GDs). We find strong conductance enhancement at the edges of GDs using scanning gate microscopy. This result is explained by our theoretical model of the opening of an additional conduction channel localized at the edges by depleting accumulated charge by the tip.
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ورودعنوان ژورنال:
- Nano letters
دوره 12 4 شماره
صفحات -
تاریخ انتشار 2012