Fabrication And Characterization Of P-Cuo/N-Si Heterojunction For Solar Cell Applications
نویسندگان
چکیده
This studies pCuO / n Si heterojunction was deposited by high vacuum thermal evaporation of Copper subjected to thermal oxidation at 300 o C on silicon. Surface morphology properties of The optical properties concerning the transmission spectra were studies for prepared thin films. this structure have been studied. XRD anaylsis discover that the peak at (111) and (111) plane are take over for the crystal quality of the CuO films. The band gap of CuO films is found to be 1.54 eV. The average grain size of is measured from AFM analysis is around 14.70 nm. The responsivity photodetector after deposited CuO appear increasing in response. Keywords—CuO, structure properties, AFM, optical properties, solar cell .
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