Physics of breakdown in InAlAs/n/sup +/-InGaAs heterostructure field-effect transistors - Indium Phosphide and Related Materials, 1993. Conference Proceedings., Fifth International Confere
نویسنده
چکیده
InAlAs/n+-InGaAs HFET’s have demonstrated a high breakdown voltage in spite of their narrow channel bandgap. In order to understand this unique feature, we have canied out a systematic study in a range of temperatures around room-temperature. We find that for HFET’s with L ~ = 1 . 9 pm, breakdown is drain-gate limited and is a two-step process. First, electrons are emitted from the gate to the insulator. Second, as a consequence of the large AEc, they enter the channel hot, into the high-field drain-gate region, and immediately relax theirenergy, causing impact-ionization. This combined mechanism explains all our observations to date regarding off-state breakdown phenomena in InAlAs/n+-InGaAs HFET’s.
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