A 60 mW per Lane , 4 × 23 - Gb / s 27 – 1 PRBS Generator
نویسندگان
چکیده
An ultra-low-power, 4-channel 2 – 1 PRBS generator with 60 mW per channel was designed, fabricated and measured to work up to 23 Gb/s. The circuit is based on a 2.5-mW BiCMOS CML latch topology, which, to the best of our knowledge, represents the lowest power for a latch operating above 10-Gb/s. The chip also includes an integrated PRBS checker and error counter.
منابع مشابه
A 3 5-Gb/s Multilane Low-Power 0.18- m CMOS Pseudorandom Bit Sequence Generator
A low-power, three-lane, pseudorandom bit sequence (PRBS) generator has been fabricated in a 0.18m CMOS process to test a multilane multi-Gb/s transmitter that cancels far-end crosstalk. Although the proposed PRBS generator was designed to produce three uncorrelated 12-Gb/s PRBS sequences, measurement results included in this paper have been obtained at only 5 Gb/s due to test setup limitations...
متن کاملA 24 - Gb / s 27 − 1 Pseudo Random Bit Sequence Generator IC in 0 . 13 μ m Bulk CMOS
This work presents a 24 Gb/s pseudo random bit sequence (PRBS) generator with a sequence length of 2 − 1 . The circuit uses an interleaved linear feedback shift register and multiplexing architecture. An output voltage swing of 280 mVpp is achieved for 24 Gb/s data rate and 390 mVpp for 10 Gb/s. The circuit features a trigger output which allows to trigger the eye or the sequence pattern. The c...
متن کاملA 4-Gb/s CMOS Clock and Data Recovery Circuit Using 1=8-Rate Clock Technique
A 4-Gb/s clock and data recovery (CDR) circuit is realized in a 0.25m standard CMOS technology. The CDR circuit exploits 1 8-rate clock technique to facilitate the design of a voltage-controlled oscillator (VCO) and to eliminate the need of 1:4 demultiplexer, thereby achieving low power consumption. The VCO incorporates the ring oscillator configuration with active inductor loads, generating fo...
متن کامل28 Gb/s direct modulation heterogeneously integrated C-band InP/SOI DFB laser.
We demonstrate direct modulation of a heterogeneously integrated C-band DFB laser on SOI at 28 Gb/s with a 2 dB extinction ratio. This is the highest direct modulation bitrate so far reported for a membrane laser coupled to an SOI waveguide. The laser operates single mode with 6 mW output power at 100 mA bias current. The 3 dB modulation bandwidth is 15 GHz. Transmission experiments using a 2 k...
متن کاملA 20 Gb/s INJECTION-LOCKED CLOCK AND DATA RECOVERY CIRCUIT
This paper presents a 20 Gb/s injection-locked clock and data recovery (CDR) circuit for burst mode applications. Utilizing a half rate injection-locked oscillator (ILO) in the proposed CDR circuit leads to higher speed operation and lower power consumption. In addition, to accommodate process, voltage, and temperature (PVT) variations and to increase the lock range, a frequency locked loop is ...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
عنوان ژورنال:
دوره شماره
صفحات -
تاریخ انتشار 2005