Education on CMOS RF Circuit Reliability
نویسنده
چکیده
This paper presents a design methodology to study RF circuit performance degradations due to hot carrier and soft breakdown. The experimental facts of DC stress on the RF properties of MOSFETs are given. The equivalent circuit model is developed and verified by measurement data. RF circuit such as a low noise amplifier is evaluated using SPICE circuit simulation. Noise figure and s-parameter degradations subject to hot electron stress and gate oxide breakdown are reported.
منابع مشابه
Announcing the Final Examination of Ekavut Kritchanchai for the degree of Doctor of Philosophy Time & Location: March 2, 2016 at 1:00 PM in HEC 450 Title: RF CIRCUIT DESIGNS FOR RELIABILITY AND PROCESS VARIABILITY RESILIENCE
Complementary metal oxide semiconductor (CMOS) radio frequency (RF) circuit design has been an ever-lasting research field. It has gained so much attention since RF circuits offer high mobility and wide-band efficiency, while CMOS technology provides the advantage of low cost and high integration capability. At the same time, CMOS device size continues to scale to the nanometer regime. Reliabil...
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