Mechanical stress effect on imprint behavior of integrated ferroelectric capacitors
نویسندگان
چکیده
Stress-induced changes in the imprint and switching behavior of ~111!-oriented Pb(Zr,Ti)O3 ~PZT!-based capacitors have been studied using piezoresponse force microscopy. Visualization of polarization distribution and d33-loop measurements in individual 131.5-mm 2 capacitors before and after stress application, generated by substrate bending, provided direct experimental evidence of stress-induced switching. Mechanical stress caused elastic switching in capacitors with the direction of the resulting polarization determined by the sign of the applied stress. In addition, stress application turned capacitors into a heavily imprinted state characterized by strongly shifted hysteresis loops and almost complete backswitching after application of the poling voltage. It is suggested that substrate bending generated a strain gradient in the PZT layer, which produced asymmetric lattice distortion with preferential polarization direction and triggered polarization switching due to the flexoelectric effect. © 2003 American Institute of Physics. @DOI: 10.1063/1.1593830#
منابع مشابه
Peculiar Effect of Mechanical Stress on Polarization Stability in Micrometer-Scale Ferroelectric Capacitors
متن کامل
Three-dimensional high-resolution reconstruction of polarization in ferroelectric capacitors by piezoresponse force microscopy
A combination of vertical and lateral piezoresponse force microscopy ~VPFM and LPFM, respectively! has been used to map the out-of-plane and in-plane polarization distribution, respectively, of ~111!-oriented Pb(Zr,Ti)O3-based ~PZT! ferroelectric patterned and reactively-ion-etched capacitors. While VPFM and LPFM have previously been used to determine the orientation of the polarization vector ...
متن کاملMechanisms of imprint effect on ferroelectric thin films
We have developed a single/double layer model to explain horizontal shifting of measured D-E hysteresis loops imprint for ferroelectric thin films. Such phenomenon can be explained by considering three mechanisms or their multiple effects: 1 stress induced by film/electrode lattice mismatch or clamping, 2 domain pinning induced by, e.g., oxygen vacancies, or 3 degradation of ferroelectric prope...
متن کاملInvestigation of the mechanism of polarization switching in ferroelectric capacitors by three-dimensional piezoresponse force microscopy
A mechanism for the switching behavior of (111)-oriented Pb(Zr, Ti)O3-based 1 × 1.5 μm2 capacitors has been investigated using three-dimensional piezoresponse force microscopy (3D-PFM). A combination of vertical and lateral piezoresponse force microscopy (VPFM and LPFM) has been used to map the out-of-plane and the in-plane components of the polarization. The three-dimensional polarization dist...
متن کامل