A System for High Current Density Reliability Testing of HBT’s with in-situ Measurement
نویسندگان
چکیده
ABSTRACT Space and other DoD systems require high reliability components, which will survive a long mission life. Heterojunction Bipolar Transistors (HBT’s) are key components in these systems. NGST has developed a robust system for long term testing of HBT’s at very high current densities (200-300 kA/cm). This test measures current enhanced degradation that may not appear with standard high temperature reliability screening methods. The system is fully automated providing high current stress, with periodic comprehensive in-situ testing of all devices.
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