The Effects of Substrate Doping Density on The Electrical Performance of Through-Silicon-Via (TSV)
نویسندگان
چکیده
In this paper, the existing lumped circuit model for Through-Silicon-Via (TSV) structure embedded in Lightly-doped silicon substrate is reviewed and improved. A new lumped circuit model for TSV structure in heavily-doped silicon substrate is proposed. The underlying physics associated with the proposed lumped elements in the circuit topology is discussed and their values are found by data fitting using 3D full-wave simulation results. To the best of the authors’ knowledge, this is the first indepth study on TSV modeling with consideration of different substrate doping densities. The proposed circuit model will be useful for signal integrity and power integrity design in 3D IC structures.
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