Silicon-integrated short-wavelength hybrid-cavity VCSEL.

نویسندگان

  • Emanuel P Haglund
  • Sulakshna Kumari
  • Petter Westbergh
  • Johan S Gustavsson
  • Gunther Roelkens
  • Roel Baets
  • Anders Larsson
چکیده

We demonstrate a short-wavelength hybrid-cavity vertical-cavity surface-emitting laser (VCSEL) heterogeneously integrated on silicon. A GaAs-based "half-VCSEL" has been attached to a dielectric distributed Bragg reflector (DBR) on a silicon wafer using ultra-thin divinylsiloxane-bis-benzocyclobutene (DVS-BCB) adhesive bonding, thereby creating a cavity with the standing-wave optical field extending over the silicon- and GaAs-based parts of the cavity. A 9 µm oxide aperture diameter VCSEL with a threshold current of 1.2 mA produces 1.6 mW optical output power at 6.0 mA bias current with a wavelength of ~845 nm.

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عنوان ژورنال:
  • Optics express

دوره 23 26  شماره 

صفحات  -

تاریخ انتشار 2015