NUMERICAL MODELLING OF ac-CHARACTERISTICS OF CdTe AND CIS SOLAR CELLS
نویسندگان
چکیده
A complete electrical characterisation of thin film solar cells necessitates the analysis of capacitance vs. voltage measurements at different frequencies and illumination intensities. We developed a fully numerical device simulation tool for polycrystalline CdTe and CulnSe, solar cells, which carries out frequency domain calculations. Numerical simulations of /(V) and C(V) characteristics of CdTe cells are compared with measurements. It is shown that capacitance voltage measurements not only confirm the thesis that a back contact barrier limits the current at high forward bias they also yield additional information on the CdTe doping in the vicinity of the contact. The numerical model has also been applied to CulnSe,. We indicate that especially the doping profiles which are deduced from C(V) data, may be misinterpreted when interface states are present at the heterojunction.
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