GaN-based waveguide devices for long-wavelength optical communications
نویسندگان
چکیده
Refractive indices of AlxGa12xN with different Al concentrations have been measured in infrared wavelength regions. Single-mode ridged optical waveguide devices using GaN/AlGaN heterostructures have been designed, fabricated, and characterized for operation in 1550 nm wavelength window. The feasibility of developing photonic integrated circuits based on III-nitride wide-band-gap semiconductors for fiber-optical communications has been discussed. © 2003 American Institute of Physics. @DOI: 10.1063/1.1557790#
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