Device modeling for split-off band detectors
نویسنده
چکیده
An approach to develop room temperature detectors is to use transitions between the light/heavy hole bands and the split-off hole band to produce enhanced response at high temperature. Results are presented on a theoretical model to predict the response in these split-off detectors. The model calculates the dark and illuminated currents from the photoabsorption, carrier escape, and transport, explaining the experimental response. The variation in dark current, responsivity, and D? with the detector parameters is presented. REPORT DOCUMENTATION PAGE (SF298) (Continuation Sheet) Continuation for Block 13
منابع مشابه
Operating temperature and the responsivity of split-off band detectors
1350-4495/$ see front matter 2009 Elsevier B.V. A doi:10.1016/j.infrared.2009.05.024 * Corresponding author. Tel.: +1 404 413 6037; fax E-mail address: [email protected] (A.G.U. Perera). A GaAs/AlGaAs heterojunction is used as a spin-split-off band IR detector operating at or around room temperature. This detector structure followed a similar layer architecture to the quantum well IR photo detect...
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