Fabrication of patterned Ge#i l-X/Si layers by pulsed laser induced epitaxy
نویسندگان
چکیده
Selective growth of Ge,Si, _ x on Si is demonstrated for the first time using a pulsed laser induced epitaxy technique, combined with either standard oxide or liftoff patterning processes. Two different dimensions of Ge,,12Si0.88/Si lateral wells are formed, 3.5 pm wide by 1700 A deep, and 6 pm wide by 1300 A deep. High-resolution transmission electron microscopy, combined with energy-dispersive x-ray imaging, reveals a well-defined two-dimensional (2D) Ge redistribution profile with no significant line or surface defects observed. The 2D Ge well distribution profiles, governed by heat and mass transport during the laser processing, are discussed.
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