Corrigendum: Crystallinity of tellurium capping and epitaxy of ferromagnetic topological insulator films on SrTiO3

This Article contains typographical errors. In the caption of Figure 4, " k|| refers to the Κ-Γ-Κ direction in the reciprocal space of (Bi,Sb)2Te3 film. " should read: " k // refers to the Κ-Γ-Κ direction in the reciprocal space of (Bi,Sb) 2 Te 3 film. " In the Discussion section, " As the Te layer thickness increases, we do not detect obvious changes in the band dispersion or doping level nor do we detect a Te-derived metallic band, but the Dirac surface states of the TI gradually fade as the interface between the TI and capping layer move beyond the probe depth of our VUV ARPES experiments, which is ~1 nm below the surface. " should read: " As the Te layer thickness increases, we do not detect obvious changes in the band dispersion or doping level nor do we detect a Te-derived metallic band, but the Dirac surface states of the TI gradually fade as the interface between the TI and capping layer move beyond the probe depth of our VUV ARPES experiments (hv = 21.21 eV), which is ~1 nm below the surface. " This work is licensed under a Creative Commons Attribution 4.0 International License. The images or other third party material in this article are included in the article's Creative Commons license, unless indicated otherwise in the credit line; if the material is not included under the Creative Commons license, users will need to obtain permission from the license holder to reproduce the material. To view a copy of this license, visit