High Power Fully Regulated Eighth-brick DC-DC Converter with GaN FETs
نویسندگان
چکیده
The recently introduced family of fourth generation eGaN® FET power devices provides significant improvements in electrical performance figures of merit, reductions in device onresistance, and larger die, enabling improved performance in high frequency, high current applications. These new devices provide a path to approximately double the power density of brick-type standard converters. This paper describes the development of an eighth-brick (Ebrick) demonstration converter which uses the latest generation eGaN FETs. This converter is capable of output power greater than 500 W with an output of 12 V and 42 A and achieves a peak efficiency of 96.7% with 52 V input voltage.
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