Polarization-induced switching effect in graphene nanoribbon edge-defect junction.
نویسندگان
چکیده
With nonequilibrium Green's function approach combined with density functional theory, we perform an ab initio calculation to investigate transport properties of graphene nanoribbon (GNR) junctions self-consistently. Tight-binding approximation is applied to model the zigzag (ZGNR) electrodes, and its validity is confirmed in comparison to the GAUSSIAN03 periodic boundary condition calculation result of the same system. The origin of abnormal jump points usually appearing in the transmission spectrum is explained with the detailed tight-binding ZGNR band structure. Transport property of an edge-defect ZGNR junction is investigated, and the tunable tunneling current can be sensitively controlled by transverse electric fields.
منابع مشابه
Edge Effects on the pH Response of Graphene Nanoribbon Field Effect Transistors
We report the pH response enhancement of the electrolyte-gated graphene field effect transistors by controllably introducing edge defects. An average improvement of pH response from 4.2 to 24.6 mV/pH has been observed after downscaling the pristine graphene into graphene nanoribbon arrays with electron beam lithography (EBL) and oxygen plasma. We attribute the improved pH response in graphene n...
متن کاملJosephson Current For a Graphene Nanoribbon Using a Lattice Model
A tight binding approach based on the Bogoliubov-de Gennes approach has been used to calculate the DC Josephson current for a lattice model for S-GNR-S junctions , for short junctions with respect to superconducting coherence length. We calculate the phase, length, width and chemical potential dependence at the Josephson junction and discuss the similarities and differences with regard to the t...
متن کاملTitle: Molecular Dynamics Simulation of Melting and Vacancy Movement in Graphene Nanoribbons Authors: Jiuning Hu
We have used classical molecular dynamics based on the Brenner potential describing carbon-carbon covalent bonds to study the melting point and vacancy movement in a rectangular graphene nanoribbon. The melting point of the graphene nanoribbon extracted from the numerical simulation is ~3400 K. We also found that two separated vacancies at high temperature (e.g., ~3000 K, below the melting poin...
متن کاملAnalytical modeling of trilayer graphene nanoribbon Schottky-barrier FET for high-speed switching applications
Recent development of trilayer graphene nanoribbon Schottky-barrier field-effect transistors (FETs) will be governed by transistor electrostatics and quantum effects that impose scaling limits like those of Si metal-oxide-semiconductor field-effect transistors. The current-voltage characteristic of a Schottky-barrier FET has been studied as a function of physical parameters such as effective ma...
متن کاملSpin-polarized transport through a zigzag-edge graphene flake embedded between two armchair nanoribbons electrodes
We study the coherent spin-polarized transport through a zigzag-edge graphene flake (ZGF), using Hubbard model in the nearest neighbor approximation within the framework of the Green function’s technique and Landauer formalism. The system considered consists of electrode/ (ZGF)/electrode, in which the electrodes are chosen to be armchair nanoribbons. The study was performed for two types of ele...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید
ثبت ناماگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید
ورودعنوان ژورنال:
- The Journal of chemical physics
دوره 131 23 شماره
صفحات -
تاریخ انتشار 2009