Generation and annihilation of boron–oxygen-related recombination centers in compensated p- and n-type silicon
نویسندگان
چکیده
The impact of boron–oxygen-related recombination centers as well as their defect kinetics have been intensely studied in boron-doped oxygen-rich p-type crystalline silicon. Experimental data for the defect in simultaneously boronand phosphorus-doped compensated pand n-type silicon, however, is sparse. In this study, we present time-resolved carrier lifetime measurements on Czochralski-grown silicon Cz-Si doped with both boron and phosphorus under illumination at 30 °C defect generation as well as at 200 °C in the dark defect annihilation . The defect generation in compensated n-type Cz-Si is found to proceed on a similar time scale as the defect generation in compensated p-type Cz-Si. However, the shape of the carrier lifetime reduction during defect generation in compensated n-type silicon differs considerably from that in compensated p-type Cz-Si. The defect annihilation in compensated n-type Cz-Si is found to take up to 1000 times longer than in compensated p-type Cz-Si. In addition, we confirm a linear dependence of the normalized defect concentration Nt on the net doping concentration p0 as well as a proportionality between the defect generation rate Rgen and the square of the net doping concentration p0 2 in compensated p-type Cz-Si. These results cannot be explained by the established BsO2i defect model, however, they agree with a recently proposed defect model in which the defect is composed of one interstitial boron atom and an interstitial oxygen dimer BiO2i . © 2010 American Institute of Physics. doi:10.1063/1.3511741
منابع مشابه
Acceptor-related metastable defects in compensated n-type silicon
This paper reviews the theory of metastable defect formation in compensated n-type silicon. By means of minority carrier lifetime measurements before and after defect activation we investigate the impact of 3 potential metastable defects relevant to the solar industry: Iron-boron pairs, chromium-boron pairs and the boron-oxygen defect.
متن کاملImpact of dopant compensation on the deactivation of boron-oxygen recombination centers in crystalline silicon
The boron-oxygen recombination center responsible for the light-induced degradation of Czochralski silicon solar cells can be permanently deactivated by illumination at elevated temperature. In this study, we examine the impact of dopant compensation on the deactivation process. The experimental results show that the deactivation rate depends inversely on the total boron concentration instead o...
متن کاملBoron-related minority-carrier trapping centers in p-type silicon
Photoconductivity-based measurements of recombination lifetimes in multicrystalline silicon are often hampered by carrier trapping effects, which cause a characteristically large relative increase in the photoconductance. Single-crystal p-type float-zone wafers of varying resistivities were cross contaminated with multicrystalline wafers that exhibited such trapping. A proportion of the impurit...
متن کاملپایداری سامانه اندازهگیری طول عمر پوزیترون و بررسی نوع و غلظت عیب ناشی از تابش الکترونهای 10 مگا الکترون ولتی بر نمونههای سیلیکونی نوع n و p
Positron annihilation lifetime spectroscopy method with valuation of non-destructive investigation of material, provides information about electron density, defect concentration, type of defects and atoms around the defects. The stability of the system was tested with a source. The time resolution of the whole system has been derived about 365 ps at FWHM. Then n- and p-type silicon samples we...
متن کامل