Transient phosphorus diffusion from silicon and argon implantation damage
نویسنده
چکیده
We have investigated transient enhanced diffusion of phosphorus in silicon following implantation with silicon or argon ions at low doses. Both conditions show uphill diffusion of phosphorus due to the defect gradients, but the resulting profiles are quite different because of differences in the initial defect distributions. These experiments support an interstitial pair diffusion mechanism for phosphorus and show the importance of bulk recombination in determining defect distributions for argon damage annealing.
منابع مشابه
A comparison of boron and phosphorus diffusion and dislocation loop growth from silicon implants into silicon
Transient enhanced diffusion �TED� results from implantation damage creating enhanced diffusion of dopants in silicon. This phenomenon has mostly been studied using boron marker layers. We have performed an experiment using boron, phosphorus, and dislocation markers to compare TED effects. This experiment shows that phosphorus is enhanced significantly more than boron during damage annealing. D...
متن کاملPoint defect based modeling of low dose silicon implant damage and oxidation effects on phosphorus and boron diffusion in silicon
Point defect kinetics are important for understanding and modeling dopant diffusion in silicon. This article describes point defect models and compares them with experimental results for intrinsically doped material. Transient dopant diffusion due to low dose silicon implant damage can be modeled with the same parameters as oxidation enhanced diffusion, and therefore provides an additional tech...
متن کاملA Detailed Physical Model for Ion Implant Induced Damage in Silicon
A unified physically based ion implantation damage model has been developed which successfully predicts both the impurity profiles and the damage profiles for a wide range of implant conditions for arsenic, phosphorus, BF2, and boron implants into single-crystal silicon. In addition, the amorphous layer thicknesses predicted by this new damage model are also in excellent agreement with experime...
متن کاملTwo-dimensional study on the effects of nonamorphizing silicon implantation damage on phosphorus diffusion
A new experimental study is performed to determine the lateral extent of silicon implantation damage on diffusion in silicon. The experimental technique is designed to allow easy comparison between damaged and nondamaged areas to facilitate specific measurements. Junction depth is measured under stripes of varying widths that protect from implantation damage as well as at points that receive th...
متن کاملEffects of low-dose Si implantation damage on diffusion of phosphorus and arsenic in Si
The effects of low-dose Si implantation damage on diffusion of low-concentration P and As in Si wafers are investigated. Dopants are implanted at a low dose and subsequently preannealed to remove any self-damage. An enhanced diffusion of P is observed by directly comparing dopant profiles in damaged and undamaged regions. Monitoring effective diffusivity of P at various annealing temperatures a...
متن کامل