Memristor-Based Resistive Random Access Memory: Hybrid Architecture for Low Power Compact Memory Design

Thangamani.V Kalaignar Karunanidhi Institute of Technology, Chennai Anna University, Kannampalayam(PO),Coimbatore-641402,TamilNadu,India. Contact No.:8675802322, E-mail: [email protected] Abstract The computer memory system has both volatile and non volatile memory. The Volatile memories such as SRAM and DRAM used as a main memory and non volatile memory like flash memory. But in recent days new non volatile technologies are invented that promise the rapid changes in the landscape of memory systems. Memristor is a two terminal passive element whose resistance depends on the magnitude and polarity of the voltage applied to it. It has nonlinear relationship between voltages and current which is similar to memory devices. In this paper we approach to design memristor based nonvolatile 6-T static random access memory (SRAM) and analysis the circuit performance with conventional 6-T SRAM cell in order to prove the parameter optimizations. Then we address the memristor-based resistive random access memory (MRRAM) which is similar to that of static random access memory (SRAM) cell and we compare the nonvolatile characteristics of MRRAM with SRAM cell.