Surface reconstruction phase diagrams for InAs, AlSb, and GaSb

We present experimental #ux-temperature phase diagrams for surface reconstruction transitions on the 6.1As compound semiconductors. The phase transitions occur within or near typical substrate temperature ranges for growth of these materials by molecular beam epitaxy and therefore provide a convenient temperature standard for optimizing growth conditions. Phase boundaries for InAs (0 0 1) [(2]4)P(4]2)], AlSb (0 0 1) [c(4]4)P(1]3)], and GaSb (0 0 1) [(2]5)P(1]3)] are presented as a function of substrate temperature and Group V-limited growth rate (proportional to #ux), for both cracked and uncracked Group V species. We discuss di!erences between materials in the slopes and o!sets of the phase boundaries for both types of Group V species. ( 2000 Elsevier Science B.V. All rights reserved. PACS: 18.15.Hi; 81.05.Ea; 68.35.Bs; 68.35.Rh