Polarization-induced Zener tunnel diodes in GaN/InGaN/GaN heterojunctions
نویسندگان
چکیده
By the insertion of thin InxGa1!xN layers into Nitrogen-polar GaN p-n junctions, polarizationinduced Zener tunnel junctions are studied. The reverse-bias interband Zener tunneling current is found to be weakly temperature dependent, as opposed to the strongly temperature-dependent forward bias current. This indicates tunneling as the primary reverse-bias current transport mechanism. The Indium composition in the InGaN layer is systematically varied to demonstrate the increase in the interband tunneling current. Comparing the experimentally measured tunneling currents to a model helps identify the specific challenges in potentially taking such junctions towards nitride-based polarization-induced tunneling field-effect transistors. VC 2015 AIP Publishing LLC. [http://dx.doi.org/10.1063/1.4934269]
منابع مشابه
Polarization-engineered GaN/InGaN/GaN tunnel diodes
We report on the design and demonstration of polarization-engineered GaN/InGaN/GaN tunnel junction diodes with high current density and low tunneling turn-on voltage. Wentzel–Kramers– Brillouin calculations were used to model and design tunnel junctions with narrow band gap InGaN-based barrier layers. N-polar p-GaN / In0.33Ga0.67N /n-GaN heterostructure tunnel diodes were grown using molecular ...
متن کاملNovel Type of Ohmic Contacts to P-Doped GaN Using Polarization Fields in Thin InxGa-xN Capping Layers
The performance of devices fabricated from GaN and related compounds is strongly affected by the resistances caused by electrical contacts. To avoid excessive heating resulting in a failure of the device, specic contact resistances less than ,10 Wcm for light-emitting diodes (LEDs) and less than ,10 Wcm for laser diodes are required. This applies in particular to ohmic contacts on p-doped GaN ...
متن کاملDemonstration of forward inter-band tunneling in GaN by polarization engineering
We report on the design, fabrication, and characterization of GaN interband tunnel junction showing forward tunneling characteristics. We have achieved very high forward tunneling currents (153 mA/cm at 10 mV, and 17.7 A/cm peak current) in polarization-engineered GaN/InGaN/GaN heterojunction diodes grown by plasma assisted molecular beam epitaxy. We also report the observation of repeatable ne...
متن کاملEffects of In profile on simulations of InGaN/GaN multi-quantum-well light-emitting diodes
Articles you may be interested in Effect of V-defects on the performance deterioration of InGaN/GaN multiple-quantum-well light-emitting diodes with varying barrier layer thickness Three dimensional numerical study on the efficiency of a core-shell InGaN/GaN multiple quantum well nanowire light-emitting diodes Effect of an electron blocking layer on the piezoelectric field in InGaN/GaN multiple...
متن کاملPolarization-free GaN Emitters in the Ultraviolet and Visible Spectra via Heterointegration on CMOS-compatible
This work presents a new type of polarization-free GaN emitter. The unique aspect of this work is that the ultraviolet and visible emission originates from the cubic phase GaN and the cubic phase InGaN/GaN multi-quantum-wells, respectively. Conventionally, GaN emitters (e.g. light emitting diodes, laser diodes) are wurtzite phase thus strong polarization fields exist across the structure contri...
متن کامل