Far-infrared free-hole absorption in epitaxial silicon films for homojunction detectors
نویسندگان
چکیده
We report on the investigation of free-carrier absorption characteristics for epitaxially grown p-type silicon thin films in the far-infrared region ~50–200 mm!, where Si homojunction interfacial workfunction internal photoemission ~HIWIP! detectors are employed. Five Si thin films were grown by molecular beam epitaxy on different silicon substrates over a range of carrier concentrations, and the experimental absorption data were compared with calculated results. The free-hole absorption is found to be almost independent of the measured wavelength. A linear regression relationship between the absorption coefficient and the carrier concentration, in agreement with theory, has been obtained and employed to calculate the photon absorption probability in HIWIP detectors. © 1997 American Institute of Physics. @S0003-6951~97!04130-2#
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