iii THERMAL METROLOGY OF POLYSILICON MEMS USING RAMAN SPECTROSCOPY

Kearney of Sandia National Laboratories for the opportunity to work on this project and experience the complete research process. Without their continuous guidance and financial support throughout the process, I would not have been able to achieve my goal of a graduate degree in mechanical engineering. In addition, I would like to thank Dr. Zhuomin Zhang for serving on the thesis reading committee, and providing a review of my work. Thank you to all of my fellow graduate students who provided assistance to me, both large and small, during my work, especially Figure 2. Opto-mechanical thermal actuator [10]. Laser fluence is focused on the center disk in order to cause heating and expansion along the legs of the device. Melting of the center disk has been observed in some cases when high fluence IR lasers are Figure 3. Polysilicon serpentine micro-heater. A potential is placed across the two large contact pads, causing Joule heating in the thin resistive beam. Such a heater can be fabricated below a metal-oxide film for gas detection.. Figure 4. Heated AFM Cantilever [20]. Electric current flows through the legs and heater (end of U-shape) regions. Localized high temperatures are maintained around the probe tip, which is located on the highly resistive heater.. Figure 6. SThM cantilever configuration with integrated thermocouple inside tip. High spatial resolution, which is limited by the AFM tip radius, can be resolved for thermometry and topography measurements.. Figure 9. Full spectrum of the first Raman transition of single crystal silicon at room temperature. The Stokes signal (right) is over an order of magnitude greater than the Anti-Stokes signal (left). A filtered Rayleigh signal is seen at 0 cm