Structural and optical properties of GaN films grown on GaAs substrates by molecular beam epitaxy
نویسندگان
چکیده
GaN films are grown on [0 0 1] GaAs substrates by plasma-assisted molecular beam epitaxy using a three-step process that consists of a substrate nitridation, deposition of a low-temperature buffer layer, and a high-temperature overgrowth. X-ray diffraction and transmission electron microscopy indicate that this method promotes prismatic growth of c-oriented a-GaN. Photoluminescence studies show that the emission from cubic b-GaN inclusions dominates the spectrum. r 2006 Elsevier Ltd. All rights reserved.
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