Characterization of High-energy Heavy-ion Implanted
نویسندگان
چکیده
BB-65 MeV ion implantation into InP compound semiconductor crystals with 5 MeV nitrogen ions has been investigated. The subsequent characterization was undertaken by a variety of techniques such as nuclear resonant reaction analysis, channeling Rutherford backscattering spectrometry, x-ray rocking curve measurement, and cross-sectional transmission electron microscopy. These techniques have clearly revealed substantial changes in structural properties and radiation-induced ~gmage distribution as well as the influence of post-implantation annealing in N ion-implanted InP samples. The results from these measurements, which are presented in this paper, are shown to be consistent with each other, and have led to a coherent description of the effects of the implantation and subsequent annealing. In a practical sense this has demonstrated the complementary nature of the analytical capabilities of all of these techniques used for the investigation of the processes involved in high-energy heavy-ion implantation. This paper presented at the International Symposium on Application of Ion Beam Produced by Small Accelerators, Jinan, Shandong, China, October 20-24, 1987. *Supported in part by the National Science Foundation [DMR84-21119]. ONE OF THE BROWN BAG PREPRTNT SERIES TN BASIC ANV APPLTEV SCIENCE
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