Wide-bandwidth charge sensitivity with a radio-frequency field-effect transistor

Radio Frequency-Single Electron Transistor: A Fast and Sensitive Electrometer Analogous to the Radio Frequency-Superconducting Quantum Interference Device

We describe a new mode of operation of the single electron transistor (SET). The so-called RF-SET (radio frequency-SET) is a dual of the RF-SQUID (radio frequency-superconducting quantum interference device). It has been operated at frequencies above 100 MHz with a very high charge sensitivity (1.2 3 10e/ÏHz). The large bandwidth, combined with a high sensitivity, will enable studies of the dyn...

Graphene Nano-Ribbon Field Effect Transistor under Different Ambient Temperatures

This paper is the first study on the impact of ambient temperature on the electrical characteristics and high frequency performances of double gate armchair graphene nanoribbon field effect transistor (GNRFET). The results illustrate that the GNRFET under high temperature (HT-GNRFET) has the highest cut-off frequency, lowest sub-threshold swing, lowest intrinsic delay and power delay product co...

Sensitivity of a micromechanical displacement detector based on the radio - frequency single - electron transistor

We investigate the tunneling shot noise limits on the sensitivity of a microme-chanical displacement detector based on a metal junction, radio-frequency single-electron transistor (rf-SET). In contrast with the charge sensitivity of the rf-SET electrometer, the displacement sensitivity improves with increasing gate voltage bias and, with a suitably optimized rf-SET, displacement sensitivities o...

Radio-frequency small-signal model of hetero-gate-dielectric p-n-p-n tunneling field- effect transistor including charge conservation capacitance and substrate parameters

A high-performance cryogenic amplifier based on a radio-frequency single electron transistor

We demonstrate a high-performance cryogenic amplifier based on a radio-frequency single-electrontransistor ~rf-SET!. The high charge sensitivity and large bandwidth of the rf-SET, along with low power dissipation, low capacitance and on-chip integrability, make it a good candidate for a general-purpose cryogenic amplifier for high impedance sources. We measure a large-gate rf-SET with an open-l...