A Compact Single Stage V-band CMOS Injection-Locked Power Amplifier with 17.3% Efficiency
نویسندگان
چکیده
This paper presents a fully integrated CMOS Vband Injection-Locked Power Amplifier (ILPA) for phase and frequency modulated millimeter-Wave (mm-Wave) transmitter. At mm-Wave frequency, multi-stage PAs are usually employed to achieve enough power gain due to low power gain of CMOS transistor even though it has low power efficiency. This work investigates mm-Wave ILPA for constant envelope modulation transmitter with high gain and high efficiency. The proposed ILPA has been implemented in 65nm CMOS technology, a 17.3% Power Added Efficiency (PAE) and 9.6dBm peak output power have been achieved with a single stage design in a compact size at 1.2V supply voltage.
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